An analytic solution to SIMOX oxygen implant profiles using joined half-Gaussian distributions

The authors describe the results of an analytic investigation of SIMOX (separation by implanted oxygen) oxide/silicon profiles using a joined half-Gaussian approximation to the instantaneous oxygen implant distribution. The advantage of this approach over computer-generated solutions is that it provides an easy way to see the effects of variations in the physical parameters of the implant process on variations in the features of the resulting SIMOX materials. These results can then be used to relate variations in SIMOX fabrication parameters to resulting variations in final device performance. It is shown that a dimensionless parameter which can be used to gauge several significant features of the implant process is the product of the extension of the silicon surface due to volume expansion from the implanted oxygen and the saturation value of oxygen in the resulting buried oxide