Irradiation effects of the inline packaged RF MEMS power sensor

Author

Zhiqiang Zhang ; Xiaoping Liao

Author_Institution

Key Lab. of MEMS, Southeast Univ., Nanjing, China

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

1284

Lastpage

1287

Abstract

This paper studies the irradiation effects of the packaged GaAs monolithic microwave integrated circuits (MMIC)-based inline radio frequency microelectromechanical systems (RF MEMS) power sensor, in order to make it be used in wireless radiation environments. The effects of radiation signals 0.5-100 mW in power and 20-35 GHz in frequency on the linearity and sensitivity of the packaged inline RF MEMS power sensor are investigated. The experiments show that the radiation RF signals result in additional output thermovoltages in this sensor when the input signal is off, with the good linear relationships. The radiation frequency with the maximum output thermovoltages is recorded at 25.5 GHz.

Keywords

III-V semiconductors; MIMIC; MMIC; electric sensing devices; gallium arsenide; integrated circuit design; integrated circuit packaging; microfabrication; microsensors; power measurement; radiation hardening (electronics); temperature sensors; voltage measurement; GaAs; MMIC; RF signal radiation; frequency 20 GHz to 35 GHz; inline packaged RF MEMS power sensor; inline radiofrequency microelectromechanical system; irradiation effect; monolithic microwave integrated circuit; output thermovoltage recording; power 0.5 mW to 100 mW; wireless radiation environment; Coplanar waveguides; Couplings; Gallium arsenide; Micromechanical devices; Power measurement; Radiation effects; Radio frequency; GaAs monolithic microwave integrated circuits (MMIC); irradiation effect; power sensor; radio frequency microelectromechanical systems (RF MEMS); thermovoltages;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985245

Filename

6985245