Title :
Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIs
Author :
Tada, M. ; Harada, Y. ; Hijioka, K. ; Ohtake, H. ; Takeuchi, T. ; Saito, S. ; Onodera, T. ; Hiroi, M. ; Furutake, N. ; Hayashi, Y.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
Hybrid-type, Cu dual damascene interconnects (DDI) are fabricated in a porous organosilica film (k = 2.1) inserted between low-k films of hard-mask (HM) and etch-stop (ES) layers. Plasma-polymerized, divinyl siloxane bis-benzocyclobutene (p-BCB, k = 2.7) film, instead of SiCN film (k > 4), is selected for these HM and ES layers due to the low k-value as well as the high etch-stop property to the porous film. The line capacitance in the hybrid-type, Cu-DDI with BCB-HM and BCB-ES layers decreases 20% compared with that of the Cu-DDI with SiO2-HM and SiCN-ES layers, achieving the effective dielectric constant (keff) of 2.6. This new interconnect structure is a strong candidate for the 70 nm-node ULSIs.
Keywords :
ULSI; copper; dielectric thin films; etching; integrated circuit interconnections; masks; organic compounds; permittivity; porous materials; 70 nm; Cu; Cu dual damascene interconnect; ULSI; dielectric constant; divinyl siloxane bis-benzocyclobutene; etch-stop layer; hybrid-line line capacitance; low-k film; organic hard-mask; plasma polymerization; porous organosilica film; Capacitance; Dielectric films; Dielectric materials; Etching; Laboratories; National electric code; Plasma properties; Semiconductor films; Silicon; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014872
