Title :
1991 IEEE International SOI Conference Proceedings (Cat. No.91CH3053-6)
Abstract :
The following topics are dealt with: reliability and radiation effects; device modeling and physics; process technology and novel SOI (silicon-on-insulator) devices; advanced circuit designs and applications; and materials and material characterization
Keywords :
elemental semiconductors; integrated circuit technology; radiation effects; reliability; semiconductor device models; semiconductor technology; semiconductor-insulator boundaries; silicon; SOI; Si-SiO/sub 2/; circuit designs; device modeling; material characterization; process technology; radiation effects; reliability;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO, USA
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162918
