Title :
Long-term stability of an SiGe HBT-based active cold load
Author :
De la Jarrige, Emilie Leynia ; Escotte, Laurent ; Gonneau, Eric ; Goutoule, Jean-Marc
Author_Institution :
LAAS, Toulouse, France
Abstract :
In this study, results of long-term stability of an Active Cold Load (ACL), realized at L-band with an SiGe heterojunction bipolar transistor are reported. The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. A noise injection radiometer has been developed to perform the measurements. A noise-equivalent delta temperature of less than 31 mK and a stability estimated to 25 mK during 95 s were obtained from Allan variance analysis. The long-term stability measurements performed over 4 months, indicate that a maximum deviation less than 0.35 K on the noise temperature is obtained with this ACL.
Keywords :
Ge-Si alloys; electric noise measurement; geophysical equipment; heterojunction bipolar transistors; load (electric); radiometers; semiconductor device measurement; Allan variance analysis; SiGe; SiGe HBT-based active cold load; SiGe heterojunction bipolar transistor; long-term stability measurement; noise injection radiometer; noise temperature; noise-equivalent delta temperature; time 95 s; Microwave radiometry; Noise; Noise measurement; Stability analysis; Temperature measurement; Thermal stability; Voltage measurement; Active cold load; noise injection radiometer; radiometer calibration; stability;
Conference_Titel :
Geoscience and Remote Sensing Symposium (IGARSS), 2011 IEEE International
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1003-2
DOI :
10.1109/IGARSS.2011.6050068
