Title :
Integration damage in organosilicate glass films
Author :
Ryan, E. Todd ; Martin, Jeremy ; Junker, Kurt ; Lee, J.J. ; Guenther, T. ; Wetzel, Jeff ; Lin, Simon ; Gidley, David W. ; Sun, Jianing
Author_Institution :
Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA
Abstract :
This study compares integration damage (ID) to two non-mesoporous organosilicate glass (OSG) films and several mesoporous OSG films with completely connected pores. The results show that the mesoporous OSG films are more susceptible to integration damage than are the non-mesoporous films.
Keywords :
dielectric thin films; glass; integrated circuit interconnections; organic compounds; porous materials; integration damage; interconnect technology; low-k interlayer dielectric material; mesoporous film; nonmesoporous film; organosilicate glass film; Bonding; Dielectric constant; Dielectric materials; Glass; Mesoporous materials; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Skin;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014876
