Characterization of photoresist poisoning induced by a post etch stripping step

Author

Lamy, S. ; Louveau, O. ; Fanget, G. ; Fayolle, M. ; Rochat, N. ; Louis, D. ; Broussous, L.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

2002

fDate

2002

Firstpage

30

Lastpage

32

Abstract

Stripping operations now become critical for Back End Of Line (BEOL) integration including Low-k dielectric and Copper, as they tend to impact the electrical performance of the finished integrated circuit when SiOC materials are used. Several characterization techniques were used to compare the effect of different stripping treatments in term of photo-resist poisoning. It was shown that some of these methods are efficient enough to obtain a classification between the stripping processes.

Keywords

copper; dielectric thin films; etching; integrated circuit metallisation; photoresists; porous materials; silicon compounds; BEOL integration; Cu-SiOC; SiOC material; copper metallisation; dual damascene integration; electrical characteristics; integrated circuit; low-k dielectric; photoresist poisoning; porous dielectric material; post-etch stripping process; Ash; Chemicals; Cleaning; Copper; Dielectric materials; Etching; Lithography; Plugs; Resists; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014877

Filename

1014877