Structural characterization of porous low-k SiOC thin films using x-ray porosimetry

Author

Lee, Hae-Jeong ; Kim, Yoon-Hae ; Kim, Jin Yong ; Lin, Eric K. ; Bauer, B.J. ; Wen-li Wu ; Kim, Hyeong Joon

Author_Institution

Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2002

fDate

2002

Firstpage

54

Lastpage

56

Abstract

A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200°C results in good mechanical properties with a dielectric constant as low as 2.5.

Keywords

X-ray reflection; density; dielectric thin films; integrated circuit interconnections; permittivity; plasma CVD coatings; porosity; porous materials; silicon compounds; 100 to 400 W; 13 to 400 Pa; 200 C; 300 C; 400 C; BTMSM liquid precursor; Si; SiOC; average density; density depth profile; deposition temperature; dielectric constant; film thickness; high-resolution specular x-ray reflectivity; mechanical properties; plasma enhanced chemical vapor deposition; porosity; porous low-k SiOC thin films; porous low-k dielectric films; structural characterization; varying process conditions; wall density; x-ray porosimetry; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric thin films; Integrated circuit noise; Mechanical factors; Plasma temperature; Reflectivity; Transistors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014885

Filename

1014885