Title :
Structural characterization of porous low-k SiOC thin films using x-ray porosimetry
Author :
Lee, Hae-Jeong ; Kim, Yoon-Hae ; Kim, Jin Yong ; Lin, Eric K. ; Bauer, B.J. ; Wen-li Wu ; Kim, Hyeong Joon
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200°C results in good mechanical properties with a dielectric constant as low as 2.5.
Keywords :
X-ray reflection; density; dielectric thin films; integrated circuit interconnections; permittivity; plasma CVD coatings; porosity; porous materials; silicon compounds; 100 to 400 W; 13 to 400 Pa; 200 C; 300 C; 400 C; BTMSM liquid precursor; Si; SiOC; average density; density depth profile; deposition temperature; dielectric constant; film thickness; high-resolution specular x-ray reflectivity; mechanical properties; plasma enhanced chemical vapor deposition; porosity; porous low-k SiOC thin films; porous low-k dielectric films; structural characterization; varying process conditions; wall density; x-ray porosimetry; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric thin films; Integrated circuit noise; Mechanical factors; Plasma temperature; Reflectivity; Transistors; Wavelength measurement;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014885
