Cohesive strength characterization of brittle low-k films

Author

Guanghai Xu ; Andideh, E. ; Bielefeld, J. ; Scherban, T.

Author_Institution

Logic Technol. Dev., Intel Corp., Hillsboro, OR

fYear

2002

fDate

2002

Firstpage

57

Lastpage

59

Abstract

The cohesive strength of low k dielectric films is an important property in predicting thermomechanical integrity of the Cu/low k interconnect structure. An approach to measure the cohesive strength of brittle low k films is presented, in which residual stress, elastic modulus and film thickness, are considered. The importance of residual film stress in cohesive failures is demonstrated.

Keywords

brittleness; cracks; dielectric thin films; elastic moduli; fracture toughness; integrated circuit interconnections; integrated circuit reliability; internal stresses; Cu/low k interconnect structure; brittle low k dielectric films; channel cracking technique; cohesive failures; cohesive strength; crack propagation velocity; elastic modulus; film thickness; fracture toughness; reliability; residual stress; thermomechanical integrity; Adhesives; Dielectric measurements; Mechanical factors; Optical films; Residual stresses; Substrates; Tensile stress; Testing; Thermal stresses; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014886

Filename

1014886