Title :
Ultralow k nanoporous silica by oxidation of silicon nanoparticles
Author :
Nozaki, Shinji ; Ono, Hiroshi ; Uchida, Kazuo ; Morisaki, Hiroshi ; Ito, Nobuo ; Yoshimaru, Masaki
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan
Abstract :
We have successfully fabricated ultralow-k (as low as 1.3) nanoporous silica with closed nanometer-size voids by oxidation of the silicon (Si) nanoparticles which were deposited by evaporation of Si in argon gas. The pores in the nanoporous silica films obtained by low-temperature dry oxidation of the Si nanoparticles are found to be closed voids by the small-angle X-ray scattering. Because of closed voids, the nanoporous silica films with low dielectric constants are tolerant of water absorption. The obtained nanoporous silica thin film is a good candidate for a low-k dielectric in future Si VLSI.
Keywords :
Fourier transform spectra; VLSI; X-ray photoelectron spectra; dielectric thin films; infrared spectra; integrated circuit technology; nanostructured materials; oxidation; permittivity; porous materials; silicon; silicon compounds; voids (solid); Ar; Ar gas; Si; Si VLSI; Si evaporation; Si nanoparticles; SiO2; closed nanometer-size voids; low dielectric constants; low-temperature dry oxidation; nanoporous silica films; small-angle X-ray scattering; ultralow-k nanoporous silica; water absorption tolerance; Argon; Dielectric constant; Dielectric thin films; Electromagnetic wave absorption; Nanoparticles; Nanoporous materials; Oxidation; Semiconductor films; Silicon compounds; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014890
