Evaluation and analysis for mechanical strengths of low k dielectrics by a finite element method

Author

Aoi, Nobuo ; Fukuda, Takuya ; Yanazawa, Hiroshi

Author_Institution

Semicond. Technol. Res. Dept., Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan

fYear

2002

fDate

2002

Firstpage

72

Lastpage

74

Abstract

We evaluated elastic modulus of various porous and nonporous inorganic low-k films by means of a nano-indentation. The elastic modulus of various low-k films shows a linear dependence on the film density for porous and nonporous inorganic low-k materials, respectively. We have studied the effect of pore aggregation on the elastic modulus of thin films by the finite element method (FEM) using the 2-dimensional random pore generation model. The FEM results for the elastic modulus, which were calculated for the 2-dimensional random pore model, fit extremely well with the experimental data obtained by the nano-indentation method.

Keywords

ULSI; aggregation; density; dielectric thin films; elastic moduli; finite element analysis; indentation; integrated circuit interconnections; mechanical strength; permittivity; porous materials; 2D random pore generation model; FEM; ULSI multilevel interconnects; elastic modulus; film density; finite element method; linear dependence; low k dielectrics; low-k films; mechanical strength; nanoindentation; nonporous inorganic films; pore aggregation; porous inorganic films; Degradation; Dielectric constant; Dielectric devices; Dielectric materials; Finite element methods; Inorganic materials; Performance analysis; Semiconductor films; Transistors; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014891

Filename

1014891