DocumentCode :
189994
Title :
A CMOS interdigital capacitive humidity sensor enhanced by a multi-layered structure
Author :
Jian-Qiu Huang ; Wen-Hao Chen ; Dong-Ping Zhu ; Lei Han
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
fYear :
2014
fDate :
2-5 Nov. 2014
Firstpage :
1459
Lastpage :
1462
Abstract :
This paper reports a novel interdigital capacitive humidity sensor enhanced by a multi-layered structure. Compared with a typical interdigital capacitive humidity sensor, both the sensitive capacitance and the sensitivity were enhanced by the improved structure. According to the test results the sensitivity and hysteresis of the humidity sensor is 10F/%RH and 3%RH respectively. The response time of the humidity senor is 15s.
Keywords :
CMOS integrated circuits; capacitive sensors; humidity sensors; hysteresis; CMOS interdigital capacitive humidity sensor; multilayered structure; response time; sensor hysteresis; sensor sensitivity; time 15 s; Capacitance; Electrodes; Humidity; Hysteresis; Resistance; Sensitivity; Time factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2014 IEEE
Conference_Location :
Valencia
Type :
conf
DOI :
10.1109/ICSENS.2014.6985289
Filename :
6985289
Link To Document :
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