• DocumentCode
    189994
  • Title

    A CMOS interdigital capacitive humidity sensor enhanced by a multi-layered structure

  • Author

    Jian-Qiu Huang ; Wen-Hao Chen ; Dong-Ping Zhu ; Lei Han

  • Author_Institution
    Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
  • fYear
    2014
  • fDate
    2-5 Nov. 2014
  • Firstpage
    1459
  • Lastpage
    1462
  • Abstract
    This paper reports a novel interdigital capacitive humidity sensor enhanced by a multi-layered structure. Compared with a typical interdigital capacitive humidity sensor, both the sensitive capacitance and the sensitivity were enhanced by the improved structure. According to the test results the sensitivity and hysteresis of the humidity sensor is 10F/%RH and 3%RH respectively. The response time of the humidity senor is 15s.
  • Keywords
    CMOS integrated circuits; capacitive sensors; humidity sensors; hysteresis; CMOS interdigital capacitive humidity sensor; multilayered structure; response time; sensor hysteresis; sensor sensitivity; time 15 s; Capacitance; Electrodes; Humidity; Hysteresis; Resistance; Sensitivity; Time factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2014 IEEE
  • Conference_Location
    Valencia
  • Type

    conf

  • DOI
    10.1109/ICSENS.2014.6985289
  • Filename
    6985289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=189994