Copper CMP at low shear force for low-k compatibility

Author

Tsai, Stan ; Chen, Liang ; Sun, Lizhong ; Mavliev, Rashid ; Hsu, Wei-Yung ; Xia, Li-Qun ; Morad, Ratson

Author_Institution

Appl. Mater., CMP Product Bus. Group, Santa Clara, CA, USA

fYear

2002

fDate

2002

Firstpage

102

Lastpage

104

Abstract

Copper CMP faces significant technical challenges at the 100 nm technology node and beyond as low-k dielectric materials replace conventional SiO₂ dielectrics. Low shear force becomes the focus of CMP process development. However, the effects of shear force during the CMP process have not been fully explored. In this paper, we studied the polishing shear force under various process conditions. The correlation between polishing shear force and low-k material delamination is experimentally established. A low shear force CMP process is developed that demonstrates low-k compatibility with comparable polishing performance to conventional high shear operation region.

Keywords

chemical mechanical polishing; copper; delamination; dielectric materials; force measurement; nanotechnology; permittivity; semiconductor technology; 100 nm; CMP process development; Cu; Cu CMP low shear force process; SiO₂; SiO₂ dielectrics; copper chemical mechanical polishing; low-k dielectric compatibility; low-k dielectric material delamination; nanotechnology; polishing performance; polishing shear force; Adhesive strength; Copper; Delamination; Dielectric materials; Force measurement; Laboratories; Optical materials; Real time systems; Sun; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014902

Filename

1014902