Title :
Corrosion control technique in copper metallization using gas dissolved water
Author :
Kodera, Masako ; Matsui, Yoshitaka ; Kosukegawa, Hiroshi ; Miyashita, Naoto ; Kamezawa, Masayuki ; Ito, Kenya
Author_Institution :
Adv. ULSI Process Eng. Dept. 5, Toshiba Corp., Yokohama, Japan
Abstract :
Copper wiring corrosion occurs after CMP as well as during CMP. It can be reduced by post-CMP cleaning using gas dissolved water. A leakage current between Cu wiring often increases during storage after CMP, which is induced by corrosion. Gas dissolved water is able to not only remove residual impurities but also control the surface potential of Cu and barrier metal. Therefore treatment in gas dissolved water can prevent increasing leakage current.
Keywords :
chemical mechanical polishing; copper; corrosion protection; environmental degradation; impurities; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; leakage currents; surface chemistry; surface cleaning; surface contamination; surface potential; Cu; Cu metallization; Cu surface potential; Cu wiring leakage current; barrier metal surface potential; chemical mechanical polishing; copper wiring corrosion; gas dissolved water; post-CMP corrosion control; residual impurity removal; wafer storage; Anodes; Cathodes; Cleaning; Copper; Corrosion; Impurities; Leakage current; Metallization; Water pollution; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014903
