Title :
Improved Cu abrasive-free polishing at 0.13 μm manufacturing and beyond
Author :
Yamada, Youhei ; Konishi, Naoki ; Ohashi, Naofumi ; Kimura, Takeshi
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
Abrasive free polishing (AFP) for 0.13 μm node copper damascene interconnects was improved. A CMP process using a modified groove pad design to provide optimized polishing friction force can reduce a metal loss of 20% on Cu wiring, compared to the conventional AFP process. We demonstrated meeting the planarity target for a 0.1 μm technology node without extra intermediate oxide polishes.
Keywords :
chemical mechanical polishing; copper; friction; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; nanotechnology; surface topography; 0.1 micron; 0.13 micron; AFP; Cu; Cu abrasive-free CMP; Cu wiring metal loss reduction; IC manufacturing technology; abrasive-free polishing; chemical mechanical polishing; copper damascene interconnects; intermediate oxide polishes; modified groove pad design; nanotechnology; optimized polishing friction force; planarity target; Abrasives; Chemicals; Copper; Friction; Manufacturing; Metallization; Page description languages; Slurries; Thickness measurement; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014904
