Title :
Gigabit CMOS transimpedance amplifiers for optical communication applications
Author_Institution :
Sch. of Electr. Eng., Ulsan Univ., South Korea
Abstract :
A number of gigabit transimpedance amplifiers are realized in submicron CMOS technologies. By exploiting regulated cascode (RGC) configuration for the input stage, the amplifiers efficiently isolate the large input parasitic capacitance and hence achieve significant bandwidth improvement. A 1.25-Gb/s RGC TIA demonstrates 950 MHz bandwidth for O.5 pF photodiode capacitance and the only 93 MHz difference even for 1 pF photodiode capacitance. Also, a 2.5-Gb/s RGC TIA realized in a 0.6 /spl mu/m CMOS technology demonstrates 2.2 GHz bandwidth for O.5 pF photodiode capacitance, confirming the RGC mechanism. In addition, a differential RGC TIA is realized in a 0.25 /spl mu/m CMOS technology. Optical measurements clearly show 1.25-Gb/s operation for 1 pF photodiode capacitance with 80 dB/spl Omega/ transimpedance gain.
Keywords :
CMOS integrated circuits; differential amplifiers; optical communication; photodiodes; semiconductor optical amplifiers; 0.25 micron; 0.5 pF; 0.6 micron; 1 pF; 2.2 GHz; 93 MHz; 950 MHz; RGC; TIA; input parasitic capacitance; optical communication; optical measurement; photodiode capacitance differential RGC TIA; regulated cascode configuration; submicron CMOS technologies; transimpedance amplifier; transimpedance gain;
Conference_Titel :
Science and Technology, 2003. Proceedings KORUS 2003. The 7th Korea-Russia International Symposium on
Conference_Location :
Ulsan, South Korea
Print_ISBN :
89-7868-617-6