DocumentCode :
1900419
Title :
Integrated chip-scale simulation of pattern dependencies in copper electroplating and copper chemical mechanical polishing processes
Author :
Tugbawa, Tamba E. ; Park, Tae H. ; Boning, Duane S.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear :
2002
fDate :
2002
Firstpage :
167
Lastpage :
169
Abstract :
We present a characterization and modeling methodology for chip-level simulation of pattern dependencies in the fabrication of copper interconnects. The methodology integrates semi-empirical models for copper CMP and copper plating processes, and uses a specialized test mask and design of experiments for calibration purposes. We demonstrate the methodology with a four step copper CMP process and a superfill electroplating technology example.
Keywords :
chemical mechanical polishing; copper; design of experiments; electroplating; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; masks; semiconductor process modelling; Cu; calibration; characterization methodology; copper CMP; copper chemical mechanical polishing; copper electroplating; copper interconnect; copper plating processes; design of experiments; four step copper CMP process; integrated chip-scale simulation; modeling methodology; pattern dependencies; semi-empirical models; superfill electroplating technology; test mask; Calibration; Chemical processes; Chemical technology; Copper; Laboratories; Semiconductor device modeling; Slurries; Surface resistance; Surface topography; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
Type :
conf
DOI :
10.1109/IITC.2002.1014922
Filename :
1014922
Link To Document :
بازگشت