A 0.35 μm SiGe BiCMOS 8 GHz Low Noise Broad Band Amplifier

Author

Young Gi Kim ; Eun Jin Lee ; Chang Woo Kim ; Kyu Sung Chae

Author_Institution

Dept. of Data Commun., Anyang Univ.

fYear

2005

fDate

March 31 2005-April 2 2005

Firstpage

224

Lastpage

227

Abstract

This paper presents a highly integrated LNA operating at 8 GHz using a 0.35 mum SiGe BiCMOS process. In the LNA design, we use folded cascade topology with common emitter degeneration technique for input matching and noise matching. To prevent saturation of the following building blocks, diode bridges are added. To provide enough gain in the RF front-end receiver, three single stage LNAs are cascaded. To overcome the drawback of the low resistive silicon substrate, we suggest a practical method called GSML for low loss and predictable high frequency interconnection lines. More than 20 dB gain is measured in a range of 8.3 GHz to 8.8 GHz. Noise figure is 7.145 dB at 8 GHz, power consumption is 119 mW, 1 dB output power compression point is -8.8 dBm, and input matching is -11.6 dB. The chip 9 size is 1.125 times 0.78 mm²

Keywords

BiCMOS analogue integrated circuits; MMIC amplifiers; impedance matching; integrated circuit design; low noise amplifiers; 0.35 mum; 119 mW; 7.145 dB; 8 GHz; 8.3 to 8.8 GHz; LNA design; RF front-end receiver; SiGe; SiGe BiCMOS; emitter degeneration technique; folded cascade topology; input matching; integrated LNA; low noise broad band amplifier; noise matching; BiCMOS integrated circuits; Bridges; Diodes; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Radio frequency; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

SoutheastCon, 2006. Proceedings of the IEEE

Conference_Location

Memphis, TN

Print_ISBN

1-4244-0168-2

Type

conf

DOI

10.1109/second.2006.1629354

Filename

1629354