A 1mG-to-20G integrated MEMS inertial sensor

Author

Yamane, Daisuke ; Konishi, Toshifumi ; Matsushima, Takaaki ; Toshiyoshi, Hiroshi ; Masu, Kazuya ; Machida, Katsuyuki

Author_Institution

Precision & Intell. Lab., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

1591

Lastpage

1594

Abstract

We report an integrated MEMS (micro-electro-mechanical systems) inertial sensor with the sensing range from 1mG to 20G (G = 9.8 m/s²), which is suitable to realize integrated CMOS (complementary-metal-oxide semiconductor)-MEMS accelerometers. By utilizing the high-density of gold and the electroplating process, we have implemented five sets of single-axis MEMS capacitive inertial sensors on a silicon die of 4 mm × 4 mm to obtain a wide sensing range from 1mG to 20G. The measured Brownian noise is ranged from 82.4 nG/Hz^1/2 to 1.11 μG/Hz^1/2, which shows the feasibility of high-resolution sensing.

Keywords

CMOS integrated circuits; accelerometers; capacitive sensors; electroplating; inertial systems; microsensors; Au; Brownian noise; complementary-metal-oxide semiconductor; electroplating process; integrated CMOS-MEMS accelerometers; integrated MEMS inertial sensor; microelectromechanical systems; silicon die; single-axis MEMS capacitive inertial sensors; Acceleration; Accelerometers; Frequency measurement; Gold; Micromechanical devices; Semiconductor device measurement; Sensors; CMOS-MEMS accelerometer; MEMS; gold; inertial sensor; sub-mG;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985322

Filename

6985322