Title :
Influence of plating parameters on reliability of copper metallization
Author :
Gandikota, Srinivas ; Padhi, Deenesh ; Ramanathan, Sivakami ; McGuirk, Chris ; Emami, Ramin ; Parikh, Suketu ; Dixit, Girish ; Cheung, Robin
Author_Institution :
ECP Div., CPI Product Bus. Group, Santa Clara, CA, USA
Abstract :
This work investigates the impact of plating parameters on the physical and electrical properties of plated copper films. Process parameters such as the plating current density and wafer rotation speed are known to affect the grain size and the residual stress in plated Cu films. We correlate the process parameters with trapped contamination in the films, which in turn influences the pre/post-anneal grain size and the relaxation of the residual stress. Preliminary reliability measurements show that the longevity of the interconnect structure is dependent on the intrinsic properties of the plated copper.
Keywords :
annealing; copper; current density; electroplating; grain size; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; rotation; stress relaxation; surface contamination; Cu; Cu metallization reliability; copper metallization plating parameters; interconnect structure longevity; plated copper film physical properties; plated copper intrinsic properties; plated film electrical properties; plating current density; plating process parameters; post-anneal grain size; pre-anneal grain size; reliability measurements; residual stress relaxation; trapped contamination; wafer rotation speed; Additives; Anodes; Chemistry; Contamination; Copper; Current density; Grain size; Integrated circuit interconnections; Metallization; Residual stresses;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014932
