• DocumentCode
    1900935
  • Title

    A novel method of removing impurities from multilevel interconnect materials

  • Author

    Fukuda, Takuya ; Shishiguchi, Seiichi ; Yanazawa, Hiroshi

  • Author_Institution
    Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    217
  • Lastpage
    219
  • Abstract
    A novel method of removing impurities from dielectric films has been developed. The removal process employs CO2 supercritical fluid (SCF), or CO2 SCF, along with a wet pretreatment. The CO2 SCF removes H2O from the film. Charges in the films are removed effectively by humidification and successive charge extraction with CO2 SCF. Films treated by this method reveal their intrinsic properties, which are masked by impurities, and this method restores the properties of an interlayer dielectric (ILD), even after interconnect formation.
  • Keywords
    dielectric thin films; integrated circuit interconnections; leakage currents; CO2; dielectric films; humidification; interconnect formation; interlayer dielectric; multilevel interconnect materials; successive charge extraction; supercritical fluid; wet pretreatment; Current measurement; Dielectric materials; Electric variables; Impurities; Leakage current; Moisture; Plasma measurements; Plasma temperature; Pollution measurement; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
  • Print_ISBN
    0-7803-7216-6
  • Type

    conf

  • DOI
    10.1109/IITC.2002.1014938
  • Filename
    1014938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1900935