Title :
A novel method of removing impurities from multilevel interconnect materials
Author :
Fukuda, Takuya ; Shishiguchi, Seiichi ; Yanazawa, Hiroshi
Author_Institution :
Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan
Abstract :
A novel method of removing impurities from dielectric films has been developed. The removal process employs CO2 supercritical fluid (SCF), or CO2 SCF, along with a wet pretreatment. The CO2 SCF removes H2O from the film. Charges in the films are removed effectively by humidification and successive charge extraction with CO2 SCF. Films treated by this method reveal their intrinsic properties, which are masked by impurities, and this method restores the properties of an interlayer dielectric (ILD), even after interconnect formation.
Keywords :
dielectric thin films; integrated circuit interconnections; leakage currents; CO2; dielectric films; humidification; interconnect formation; interlayer dielectric; multilevel interconnect materials; successive charge extraction; supercritical fluid; wet pretreatment; Current measurement; Dielectric materials; Electric variables; Impurities; Leakage current; Moisture; Plasma measurements; Plasma temperature; Pollution measurement; Temperature measurement;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014938
