Thin film, organic channel field effect transistor

Summary form only given, as follows. Field Effect Transistors (FETs) the channels of which are made of 4 bi-layers of a conducting LB film (EDTIT, i.e. Ethylene-di-thio-tetra-thia-fulvalene) have been successfully made. The gate is made of highly doped silicon and the gate insulator is thermal oxide 1000Å thick (breakdown field ⩾ 8 MV/cm, leakage current below 0.5 μA/cm² at 5 MV/cm). The drain characteristics exhibit the classical shape of p-channel MISFETs. These characteristics have been interpreted in terms of a model taking into account the effect of traps on hole conduction in the LB conducting film. Fitting the characteristics by O´Reilly´s model (1965) leads to hole mobilities of a few 10^-3 cm²/Vs, which are among the highest drift mobilities reported so far in organic materials. Measurements at low temperature in vacuo unambiguously show that conduction in the channel is purely electronic.