DocumentCode :
1901073
Title :
Nondestructive stiffness and density characterization of porous low-k films by surface acoustic wave spectroscopy
Author :
Flannery, C.M. ; Baklanov, M.R.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
fYear :
2002
fDate :
2002
Firstpage :
233
Lastpage :
235
Abstract :
Nanoporous methylsilsesquioxane (MSSQ) films are a leading candidate for low dielectric constant (k) materials for microelectronic interconnects. Mechanical strength reduces rapidly with lower k (increasing porosity) however, and there is a lack of techniques to characterize these properties in the k ≤ 2 range. This work reports surface acoustic wave spectroscopy characterization of density/porosity and Young´s modulus values of a range of methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness.
Keywords :
Young´s modulus; density; dielectric thin films; elastic constants; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; mechanical strength; nanostructured materials; nondestructive testing; permittivity; photothermal spectroscopy; porous materials; MSSQ films; SAW spectroscopy; Young´s modulus; density characterization; film mechanical strength; film porosity characterization; low dielectric constant materials; microelectronic interconnects; nanoindentation measurements; nanoporous methylsilsesquioxane films; nondestructive testing; porous low-k films; stiffness characterization; surface acoustic wave spectroscopy; Acoustic measurements; Acoustic waves; Dielectric constant; Dielectric materials; Manufacturing; Mechanical factors; Microelectronics; Nanoporous materials; Spectroscopy; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
Type :
conf
DOI :
10.1109/IITC.2002.1014943
Filename :
1014943
Link To Document :
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