P-contact MESFETs for high voltage mixed-mode RF-applications

Author

Wennekers, P. ; Zdebel, P. ; Wilson, M. ; Bushey, T. ; Bernhard, B.

Author_Institution

Sector Technol./CPL, Motorola Inc., Tempe, AZ, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

155

Lastpage

158

Abstract

MESFETs with P-well operating at higher drain voltage generate holes by impact ionization. They charge the GaAs substrate, give rise to increased output conductance and drain current transients at low temperature and facilitate inter-device coupling. Draining the holes by a P/sub +/-contact, which is attached to the source as an integral part of the device structure, neutralizes the adverse impact of holes on device performance. The improved MESFET is utilized in the digital section of a single-pole-eight-throw RF switch with integrated decoder.

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect transistor switches; gallium arsenide; impact ionisation; mixed analogue-digital integrated circuits; GaAs; GaAs substrate; P-contact MESFET; drain current transient; high voltage mixed-mode circuit; hole generation; impact ionization; integrated decoder; inter-device coupling; output conductance; single-pole-eight-throw RF switch; Bipolar transistors; Charge carrier processes; Current measurement; Decoding; Electrodes; Gallium arsenide; Intrusion detection; MESFETs; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567835

Filename

567835