• DocumentCode
    1901234
  • Title

    CAD Model for Threshold and Subthreshold Conduction in Short Channel MOSFETs

  • Author

    Antognetti, P. ; Caviglia, D. ; Profumo, E.

  • Author_Institution
    University of Genova - Italy
  • fYear
    1981
  • fDate
    22-24 Sept. 1981
  • Firstpage
    38
  • Lastpage
    40
  • Abstract
    In this work we propose a simple model for the operation of the short channel MOSFET in weak and strong inversion. This model shows a better agreement to experimental data than previous models and is well suited for use in circuit simulation programs.
  • Keywords
    Analytical models; Circuit simulation; Doping; Electrons; MOSFETs; Numerical analysis; SPICE; Statistics; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1981. ESSCIRC '81. 7th European
  • Conference_Location
    Freiburg, F. R. Germany
  • Print_ISBN
    3800712385
  • Type

    conf

  • Filename
    5435013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1901234