• DocumentCode
    1901358
  • Title

    HTS shielded dielectric resonators

  • Author

    Penn, S.J. ; Alford, N.McN.

  • Author_Institution
    EEIE, South Bank Univ., London, UK
  • fYear
    1996
  • fDate
    35174
  • Firstpage
    42522
  • Lastpage
    42526
  • Abstract
    Single crystal dielectrics and HTS thin films have been shown to possess very high quality factors (Q). This makes them highly desirable in the area of cellular and satellite communications. A disadvantage is that single Crystal dielectrics are expensive. Dielectrics resonators produced by sintering are well known but generally do not possess high enough Q factors to offer significant performance advantage. We show that by careful attention to the quality of the ceramic processing and to the sintering conditions, very high Q dielectric resonators can be produced. Room temperature Q of 5×104 is routinely measured at 10 GHz. We present preliminary results on sintered dielectrics and HTS thick film shields which demonstrate that Q´s well in excess of 105 are achievable at 10 GHz and 77 K. This opens up the possibility of constructing inexpensive filters with exceptionally low insertion loss
  • Keywords
    Q-factor; dielectric resonators; high-temperature superconductors; shielding; sintering; superconducting microwave devices; superconducting thin films; thick film devices; 10 GHz; 77 K; HTS shielded dielectric resonators; HTS thick film shields; SHF; ceramic processing; low insertion loss; quality factors; sintering conditions;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Superconducting Microwave Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19960598
  • Filename
    543502