DocumentCode
1901358
Title
HTS shielded dielectric resonators
Author
Penn, S.J. ; Alford, N.McN.
Author_Institution
EEIE, South Bank Univ., London, UK
fYear
1996
fDate
35174
Firstpage
42522
Lastpage
42526
Abstract
Single crystal dielectrics and HTS thin films have been shown to possess very high quality factors (Q). This makes them highly desirable in the area of cellular and satellite communications. A disadvantage is that single Crystal dielectrics are expensive. Dielectrics resonators produced by sintering are well known but generally do not possess high enough Q factors to offer significant performance advantage. We show that by careful attention to the quality of the ceramic processing and to the sintering conditions, very high Q dielectric resonators can be produced. Room temperature Q of 5×104 is routinely measured at 10 GHz. We present preliminary results on sintered dielectrics and HTS thick film shields which demonstrate that Q´s well in excess of 105 are achievable at 10 GHz and 77 K. This opens up the possibility of constructing inexpensive filters with exceptionally low insertion loss
Keywords
Q-factor; dielectric resonators; high-temperature superconductors; shielding; sintering; superconducting microwave devices; superconducting thin films; thick film devices; 10 GHz; 77 K; HTS shielded dielectric resonators; HTS thick film shields; SHF; ceramic processing; low insertion loss; quality factors; sintering conditions;
fLanguage
English
Publisher
iet
Conference_Titel
Superconducting Microwave Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19960598
Filename
543502
Link To Document