Ion-implanted GaAs JFETs with f/sub t/>45 GHz for low-power electronics

GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 /spl mu/m. The structure is fully self-aligned and employs all ion implantation doping. p/sup +/-gate regions are formed with either Zn or Cd implants along with a P co-implantation to reduce diffusion. The source and drain implants are engineered with Si or SiF implants to minimize short channel effects. 0.3 /spl mu/m gate length JFETs are demonstrated with a subthreshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.