DocumentCode :
1901393
Title :
Light-Sensitivity of Sidegating Effect in Gaas Mesfet´s
Author :
Shwu-Jing Chang ; Chien-Ping Lee
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
87
Keywords :
Electron traps; Gallium arsenide; Ionization; Leakage current; Lighting; MESFETs; Numerical simulation; Schottky barriers; Substrates; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664569
Filename :
664569
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1901393
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