DocumentCode
1901442
Title
Electroless deposited CoWB for copper diffusion barrier metal
Author
Itabashi, Takeyuki ; Nakano, Hiroshi ; Akahoshi, Haruo
Author_Institution
Res. Lab., Hitachi Ltd., Ibaraki, Japan
fYear
2002
fDate
2002
Firstpage
285
Lastpage
287
Abstract
A metal capping barrier deposited by an electroless CoWB (cobalt tungsten boron) alloy plating method on damascene copper interconnects has been investigated. The metal capping barrier structure is one solution to prevent the decrease of coupling capacity associated with SiN or SiC capping barriers. In this paper, we propose a direct electroless deposition of Co alloy on copper surfaces, using dimethyl amine borane (DMAB) as a reducing agent, without a palladium catalyst.
Keywords
boron alloys; cobalt alloys; diffusion barriers; electroless deposition; integrated circuit interconnections; tungsten alloys; CoWB; Cu; coupling capacity decrease prevention; damascene Cu interconnects; diffusion barrier; dimethyl amine borane reducing agent; direct electroless deposition; electroless deposited CoWB; metal capping barrier; Boron alloys; Capacitance; Cobalt alloys; Copper alloys; Electrodes; High K dielectric materials; Hydrogen; Oxidation; Silicon compounds; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014958
Filename
1014958
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