High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Author

Zhe Xu ; Jinyan Wang ; Yong Cai ; Jingqian Liu ; Zhen Yang ; Xiaoping Li ; Maojun Wang ; Min Yu ; Bing Xie ; Wengang Wu ; Xiaohua Ma ; Jincheng Zhang ; Yue Hao

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

33

Lastpage

35

Abstract

High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 °C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 °C, the fabricated inverter operates properly at a supply voltage (V_DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V_TH), 2.4 V for logic-low noise margin (NM_L), and 3.4 V for logic-high noise margin (NM_H). Meanwhile, the inverter exhibits small variations from RT to 300 °C in terms of logic voltage swing, V_TH, NM_L, and NM_H with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.

Keywords

III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; logic circuits; logic gates; wide band gap semiconductors; D-mode HEMT; E-mode MOSFET; GaN; RT; depletion-mode HEMT; enhancement-mode MOSFET; high temperature characteristics; inverter; logic voltage swing; logic-high noise margin; logic-low noise margin; temperature 293 K to 298 K; temperature 300 degC; voltage 2.4 V; voltage 3.3 V; voltage 3.4 V; voltage 6.5 V; voltage 7 V; Gallium nitride; HEMTs; Inverters; Logic gates; MOSFET; Temperature; Threshold voltage; DCFL; GaN; inverter; small variations;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2291854

Filename

6680671