Title :
High reliability HV-CMOS transistors in standard CMOS technology
Author :
Sun, W.F. ; Shi, L.X.
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A novel high-reliability HV-CMOS (High Voltage CMOS) compatible with 0.6μm rules standard Bulk-Silicon (BS) CMOS process was proposed. The reliability of the HV-CMOS is greatly improved by adding the p-well to HV-PMOS (High Voltage PMOS) for etching the unwanted thick-gate-oxide film and that to HV-DNMOS (High Voltage Double-Diffusion NMOS) for preventing punch-through. The breakdown voltage of the presented HV-CMOS exceeds 100 V, which can be used in power driver ICs, etc.
Keywords :
CMOS integrated circuits; MOSFET; electric breakdown; etching; reliability; thin film transistors; CMOS technology; CMOS transistors; breakdown voltage; etching; gate-oxide film; high voltage CMOS; reliability; Annealing; Boron; CMOS logic circuits; CMOS process; CMOS technology; Driver circuits; Etching; MOS devices; Sun; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
DOI :
10.1109/IPFA.2003.1222714
