DocumentCode
1901776
Title
Novel gate concepts for MOS devices
Author
Colinge, Jean-Pierre
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fYear
2004
fDate
21-23 Sept. 2004
Firstpage
45
Lastpage
49
Abstract
The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and "triple-plus"-gate devices such as the pi-gate and omega-gate MOSFETs.
Keywords
MOSFET; silicon-on-insulator; FinFET; SOI substrates; current drive; double-gate MOSFET; multiple-gate MOSFET; omega-gate devices; pi-gate devices; short-channel effects; single gate electrode MOSFET; triple-gate MOSFET; triple-plus gate devices; Doping; Electrodes; FinFETs; MOS devices; MOSFET circuits; Poisson equations; Semiconductor films; Silicon; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN
0-7803-8478-4
Type
conf
DOI
10.1109/ESSDER.2004.1356484
Filename
1356484
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