• DocumentCode
    1901836
  • Title

    Conductive atomic force microscopy application on leaky contact analysis and characterization

  • Author

    Chuang, J.H. ; Lee, Jon C.

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    54
  • Lastpage
    57
  • Abstract
    Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.
  • Keywords
    atomic force microscopy; contact resistance; stacking faults; AFM; I-V curve; conductive atomic force microscopy; current mapping; electrical properties; failure; leaky contact; Atomic force microscopy; Circuit faults; Contacts; Electron beams; Electron emission; Failure analysis; Fault diagnosis; Probes; Surface topography; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
  • Print_ISBN
    0-7803-7722-2
  • Type

    conf

  • DOI
    10.1109/IPFA.2003.1222737
  • Filename
    1222737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1901836