Title :
Conductive atomic force microscopy application on leaky contact analysis and characterization
Author :
Chuang, J.H. ; Lee, Jon C.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.
Keywords :
atomic force microscopy; contact resistance; stacking faults; AFM; I-V curve; conductive atomic force microscopy; current mapping; electrical properties; failure; leaky contact; Atomic force microscopy; Circuit faults; Contacts; Electron beams; Electron emission; Failure analysis; Fault diagnosis; Probes; Surface topography; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
DOI :
10.1109/IPFA.2003.1222737
