Title :
Baseband amplifiers in transferred-substrate HBT technology
Author :
Mensa, D. ; Lee, Q. ; Guthrie, J. ; Jaganathan, S. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.
Keywords :
bipolar MIMIC; feedback amplifiers; heterojunction bipolar transistors; millimetre wave amplifiers; wideband amplifiers; 15.6 dB; 50 GHz; 6.8 dB; 85 GHz; Darlington amplifier; baseband amplifiers; fiber-optic receivers; mirror doubler amplifier; transferred-substrate HBT technology; Bandwidth; Baseband; Differential amplifiers; Etching; Feedback amplifiers; Gain; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Resistors; Silicon compounds;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722614
