DocumentCode
1901975
Title
Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO2 [CMOS device applications]
Author
Hooker, J.C. ; Perez, N. ; Alèn, P. ; Ritala, M. ; Leskelä, M. ; Roozeboom, F. ; van Berkurn, J.G.M. ; Naburgh, E.P. ; Van Den Heuve, F.C. ; Maes, J.W.
Author_Institution
Philips Res. Leuven, Belgium
fYear
2004
fDate
21-23 Sept. 2004
Firstpage
85
Lastpage
88
Abstract
Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φm) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φm of 4.7±0.1 eV, also, after high-temperature thermal treatment, with the 400°C deposition giving more reliable electrical performance.
Keywords
MOSFET; annealing; atomic layer deposition; metallic thin films; tantalum compounds; thermal stability; work function; 4.6 to 4.8 eV; 400 degC; 500 degC; CMOS devices; Ta(Si)N-HfO2; film silicon content; high-frequency capacitance-voltage measurements; high-temperature thermal treatment; metal gate electrodes; optimized pulse sequence deposition; thermal ALD gate electrodes; thermal atomic layer deposition; work function stability; Atomic layer deposition; Chemistry; Dielectric materials; Electrodes; Hafnium oxide; Inorganic materials; Jacobian matrices; Laboratories; Thermal stability; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN
0-7803-8478-4
Type
conf
DOI
10.1109/ESSDER.2004.1356494
Filename
1356494
Link To Document