Title :
High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy
Author :
Eyben, P. ; Fukutome, H. ; Alvarez, D. ; Vandervorst, W.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This work presents the recent progress in scanning spreading resistance microscopy( SSRM) capabilities highlighting enhanced spatial resolution (<5 nm) and excellent concentration sensitivity (<20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90 nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40 nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.
Keywords :
MOSFET; annealing; atomic force microscopy; calibration; carrier density; doping profiles; electric resistance measurement; nitridation; semiconductor device measurement; semiconductor process modelling; 40 nm; 90 nm; AFM; MOSFET; SPER-annealing; SSRM spatial resolution; Si; concentration sensitivity; dopant gradient resolution; high resolution 2D carrier profiling; lateral diffusion nitridation effects; n-MOS technology; process simulations; process simulator 2D calibration; scanning spreading resistance microscopy; shallow implant activation; silicon nanodevices; solid phase epitaxial regrowth; Atomic force microscopy; CMOS technology; Calibration; Contacts; Implants; Laboratories; Probes; Silicon; Size measurement; Spatial resolution;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356498