Title :
A 3–10 GHz low power, low noise amplifier with 90nm, 1.2V standard CMOS technology
Author :
Reddy, M. Ramana ; Murthy Sharma, N.S. ; Sekhar, P. Chandra
Author_Institution :
Dept. of ECE, CBIT, Hyderabad, India
Abstract :
3-10 GHz ultra wideband second stage cascade low noise amplifier wideband input matching network design in a 90nm 1.2V standard RF CMOS technology realization of a single chip CMOS UWB communication systems. The proposed ultra wideband LNA achieves 12.5 dB power gain with a good input matching receiver with bandwidth of 7.6 GHz and an average noise figure greater than 3dB with 1.2v power supply a reverse isolation greater than 45dB up to 10.
Keywords :
CMOS integrated circuits; low noise amplifiers; microwave amplifiers; ultra wideband communication; frequency 3 GHz to 10 GHz; gain 12.5 dB; input matching receiver; single chip CMOS UWB communication systems; size 90 nm; standard RF CMOS technology realization; ultra wideband LNA; ultra wideband second stage cascade low noise amplifier; voltage 1.2 V; wideband input matching network design; Bandwidth; CMOS integrated circuits; CMOS technology; Microwave amplifiers; Radio frequency; Slag; Solids; Cascade amplifier; RF CMOS; gain; low noise amplifier (LNA); ultra wideband (UWB);
Conference_Titel :
Electrical, Computer and Communication Technologies (ICECCT), 2015 IEEE International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-6084-2
DOI :
10.1109/ICECCT.2015.7226157
