A 3–10 GHz low power, low noise amplifier with 90nm, 1.2V standard CMOS technology

Author

Reddy, M. Ramana ; Murthy Sharma, N.S. ; Sekhar, P. Chandra

Author_Institution

Dept. of ECE, CBIT, Hyderabad, India

fYear

2015

fDate

5-7 March 2015

Firstpage

1

Lastpage

5

Abstract

3-10 GHz ultra wideband second stage cascade low noise amplifier wideband input matching network design in a 90nm 1.2V standard RF CMOS technology realization of a single chip CMOS UWB communication systems. The proposed ultra wideband LNA achieves 12.5 dB power gain with a good input matching receiver with bandwidth of 7.6 GHz and an average noise figure greater than 3dB with 1.2v power supply a reverse isolation greater than 45dB up to 10.

Keywords

CMOS integrated circuits; low noise amplifiers; microwave amplifiers; ultra wideband communication; frequency 3 GHz to 10 GHz; gain 12.5 dB; input matching receiver; single chip CMOS UWB communication systems; size 90 nm; standard RF CMOS technology realization; ultra wideband LNA; ultra wideband second stage cascade low noise amplifier; voltage 1.2 V; wideband input matching network design; Bandwidth; CMOS integrated circuits; CMOS technology; Microwave amplifiers; Radio frequency; Slag; Solids; Cascade amplifier; RF CMOS; gain; low noise amplifier (LNA); ultra wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical, Computer and Communication Technologies (ICECCT), 2015 IEEE International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-6084-2

Type

conf

DOI

10.1109/ICECCT.2015.7226157

Filename

7226157