DocumentCode
1902227
Title
Source-gated transistors for thin film electronics
Author
Shannon, J.M. ; Balon, F.
Author_Institution
Adv. Technol. Inst., Surrey Univ., Guildford, UK
fYear
2004
fDate
21-23 Sept. 2004
Firstpage
125
Lastpage
127
Abstract
A new form of thin film transistor, named the source-gated transistor (SGT), is described. The current is determined by a source barrier, located opposite a gate that controls the effective source barrier height. The SGT has several advantages compared with a standard FET. These include a much lower saturation voltage, higher output impedance, and in the case of amorphous silicon, a much better stability.
Keywords
Schottky barriers; amorphous semiconductors; elemental semiconductors; hydrogen; silicon; thin film transistors; SGT stability; Si:H; gate-controlled source barrier height; hydrogenated amorphous silicon; metal-semiconductor Schottky barrier; output impedance; saturation voltage; source-gated transistors; thin film electronics; thin film technology; thin film transistor; Amorphous silicon; Circuits; FETs; Glass; Ion implantation; Optical arrays; Passivation; Schottky barriers; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN
0-7803-8478-4
Type
conf
DOI
10.1109/ESSDER.2004.1356504
Filename
1356504
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