• DocumentCode
    1902234
  • Title

    Electrical characterization of SiOxNy/Ta2O5 stacked gate oxides on strained-Si

  • Author

    Maiti, C.K. ; Samanta, S.K. ; Dalapati, G.K. ; Chatterjee, S.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    146
  • Lastpage
    150
  • Abstract
    In this paper, we investigate the SiOxNy/Ta2O5 gate stack as a possible candidate for future strained-Si CMOS applications and demonstrate and possibility of integration of high-k gate dielectric with the strained-Si.
  • Keywords
    dielectric materials; electric admittance; permittivity; silicon compounds; tantalum compounds; SiOxNy-Ta2O5; electrical characterization; high-k gate dielectric; stacked gate oxides; strained-Si; strained-Si CMOS; Capacitance; Capacitance-voltage characteristics; Capacitors; Frequency dependence; Germanium silicon alloys; Molecular beam epitaxial growth; Semiconductor films; Shape; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
  • Print_ISBN
    0-7803-7722-2
  • Type

    conf

  • DOI
    10.1109/IPFA.2003.1222755
  • Filename
    1222755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1902234