DocumentCode :
1902234
Title :
Electrical characterization of SiOxNy/Ta2O5 stacked gate oxides on strained-Si
Author :
Maiti, C.K. ; Samanta, S.K. ; Dalapati, G.K. ; Chatterjee, S.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
146
Lastpage :
150
Abstract :
In this paper, we investigate the SiOxNy/Ta2O5 gate stack as a possible candidate for future strained-Si CMOS applications and demonstrate and possibility of integration of high-k gate dielectric with the strained-Si.
Keywords :
dielectric materials; electric admittance; permittivity; silicon compounds; tantalum compounds; SiOxNy-Ta2O5; electrical characterization; high-k gate dielectric; stacked gate oxides; strained-Si; strained-Si CMOS; Capacitance; Capacitance-voltage characteristics; Capacitors; Frequency dependence; Germanium silicon alloys; Molecular beam epitaxial growth; Semiconductor films; Shape; Silicon germanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the
Print_ISBN :
0-7803-7722-2
Type :
conf
DOI :
10.1109/IPFA.2003.1222755
Filename :
1222755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1902234
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