Title :
W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design
Author :
Yu, Min-Chieh ; Matloubian, M. ; Petre, P. ; Hamilton, L. ; Bowen, R. ; Lui, Max ; Sun, H.C. ; Ngo, Chiu ; Janke, P.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
In this paper we report on the development of W-band MMIC power amplifiers using 0.1 /spl mu/m AlInAs-GaInAs-InP HEMT technology and finite-ground coplanar waveguide (FGCPW) designs. Two single-stage single-ended W-band MMICs using 150 /spl mu/m and 250 /spl mu/m wide HEMTs were designed, fabricated and tested. The results show that the small signal performance of the MMIC using the 150 /spl mu/m wide HEMT has a linear gain of more than 12 dB at 94 GHz. The corresponding amplifier exhibits an output power of 13.8 dBm with a power-added efficiency of 23%. The MMIC using the 250 /spl mu/m wide HEMT demonstrates 9 dB linear gain and the amplifier has a maximum output power of 16.7 dBm with 17.5% power added efficiency at 94 GHz. These power amplifiers are the first ever reported using a CPW configuration at this frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguide components; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave power amplifiers; 0.1 micron; 12 dB; 17.5 percent; 23 percent; 9 dB; 94 GHz; AlInAs-GaInAs-InP; EHF; InP-based HEMT MMIC; MIMIC power amplifiers; W-band; coplanar waveguide designs; finite-ground CPW design; single-stage single-ended type; Coplanar waveguides; Frequency; Gain; HEMTs; Indium phosphide; MMICs; Optical device fabrication; Phased arrays; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722616
