Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing

Author

ManjulaRani, K.N. ; Rao, V. Ramgopal ; Vasi, J.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

fYear

2003

fDate

7-11 July 2003

Firstpage

168

Lastpage

172

Abstract

In this paper, we study the reliability of n-channel Metal-Nitride-Silicon FETs fabricated using ultrathin Jet Vapor Deposited (JVD) Silicon Nitride gate dielectric under constant voltage stressing. Due to the stress, shifts in threshold voltage and transconductance as well as interface state generation are observed. Our study shows that degradation is polarity dependent. MNSFETs show lower degradation when the applied stress voltage is positive. We have also compared the performance of MNSFETs with conventional MOSFETs under identical stress conditions. Under positive stressing, MNSFETs clearly outperform the MOSFETs but under negative stressing MNSFETs show more degradation.

Keywords

MISFET; dielectric materials; interface states; semiconductor device reliability; silicon compounds; stress effects; MOSFET; SiN; high field stressing; interface state; polarity; reliability; silicon nitride gate dielectric; threshold voltage; transconductance; ultrathin JVD silicon nitride metal nitride FETs; ultrathin jet vapor deposition; Annealing; Charge pumps; Degradation; Dielectrics; FETs; Interface states; MOSFETs; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the

Print_ISBN

0-7803-7722-2

Type

conf

DOI

10.1109/IPFA.2003.1222759

Filename

1222759