Analysis of abnormal ESD failure mechanism in high-pin-count BGA packaged ICs due to stressing non-connected balls

Author

Lo, Wen-Yu ; Ker, Ming-Dou

Author_Institution

Mixed Signal Product Div., Silicon Integrated Syst. Corp., Hsinchu, Taiwan

fYear

2003

fDate

7-11 July 2003

Firstpage

174

Lastpage

178

Abstract

An abnormal failure mechanism due to ESD stressing on the Non-Connected (NC) balls of a high-pin-count (>500 balls) BGA packaged IC is presented. Failure analyses including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveform during ESD zapping had been performed to give clear explanation on this unusual phenomenon. New protection solutions have been proposed to solve this problem in a BGA packaged IC product with an improvement ESD robustness, which can sustain 3-kV HBM and 300-V MM ESD stresses.

Keywords

ball grid arrays; electric current measurement; electrostatic discharge; failure analysis; integrated circuit packaging; scanning electron microscopy; 3 kV; 300 V; ESD zapping; HBM; SEM; abnormal ESD failure mechanism; current waveform; high-pin-count BGA packaged ICs; robustness; scanning electronic microscopy; stressing nonconnected balls; Current measurement; Electronics packaging; Electrostatic discharge; Failure analysis; Integrated circuit packaging; Performance evaluation; Protection; Robustness; Scanning electron microscopy; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2003. IPFA 2003. Proceedings of the 10th International Symposium on the

Print_ISBN

0-7803-7722-2

Type

conf

DOI

10.1109/IPFA.2003.1222760

Filename

1222760