Analysis of strained-silicon-on-insulator double-gate MOS structures

Author

Barin, Nicola ; Fiegna, Claudio ; Sangi, Eico

Author_Institution

Dept. of Eng., Ferrara Univ., Italy

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

169

Lastpage

172

Abstract

Ultra-thin body double-gate (DG) MOS structures with strained silicon are investigated by the solution of the 1D Schrodinger and Poisson equations, with open boundary conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current.

Keywords

MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; silicon-on-insulator; tunnelling; 1D Schrodinger equation; Poisson equation; Si-SiO₂; carrier distribution; charge-voltage characteristics; device architecture electrostatics; double-gate MOS structures; gate electrode wave functions; gate tunneling current; silicon-on-insulator; strained SOI structures; subband population; subband structure; ultra-thin body MOS structures; Boundary conditions; CMOS technology; Capacitive sensors; Electrodes; Electrons; Germanium alloys; Silicon; Tensile strain; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356516

Filename

1356516