DocumentCode :
1902441
Title :
60-70 dB isolation 2-19 GHz MMIC switches
Author :
Houng, S.G. ; Tsukii, T. ; Schindler, M.J.
Author_Institution :
Raytheon Electromag. Syst. Div., Goleta, CA, USA
fYear :
1989
fDate :
22-25 Oct. 1989
Firstpage :
173
Lastpage :
176
Abstract :
High-isolation switches are made with p-i-n diodes in a channelized microwave-integrated-circuit structure. Although the performance of these switches is acceptable, they are difficult and costly to produce. GaAs high-isolation switches that offer a high-performance, low-cost, reproducible alternative are presented. A number of novel high-isolation features have been incorporated, all using standard monolithic-microwave-integrated-circuit (MMIC) processing. Isolation greater than 70 dB for a single-pole, single-throw switch and 62 dB for a single-pole, double-throw switch has been achieved. This represents a substantial improvement over the present 40-dB state-of-the-art isolation.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit technology; semiconductor switches; 2 to 19 GHz; 60 to 70 dB; FET switches; GaAs; MMIC switches; SPDT switch; SPST switch; channelized microwave-integrated-circuit structure; double-throw switch; high-isolation features; high-isolation switches; high-performance; isolation; low-cost; microwave switches; p-i-n diodes; semiconductors; single-throw switch; FETs; Fabrication; MMICs; Microstrip; Packaging; Radio frequency; Surface waves; Switches; Switching circuits; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/GAAS.1989.69319
Filename :
69319
Link To Document :
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