Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors

Author

Anholt, R. ; Bozada, C. ; Desalvo, G. ; Dettmer, Roger ; Ebel, John ; Gillespie, J. ; Havasy, C.

Author_Institution

Gateway Modeling Inc., Minneapolis, MN, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

167

Lastpage

170

Abstract

We describe a decoupled approach to modeling self heating effects in HBTs where we solve for average thermal impedances in three dimensions and solve the electrical problem at three fixed temperatures in two dimensions, then we find the self consistent solution of the temperature rise and current equations. Results are given for thermal impedances of thermally-shunted HBTs. Measured forward Gummel IV curves, IV curves for forced base currents, f/sub t/ values, and breakdown characteristics are compared with the model.

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal analysis; GaAs-AlGaAs; HBT; average thermal impedances; breakdown characteristics; current equations; decoupled electrical/thermal modeling; f/sub t/ values; forced base currents; forward Gummel I-V curves; heterojunction bipolar transistors; self heating effects; temperature rise; thermally-shunted HBTs; Computational modeling; Current measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Impedance measurement; Poisson equations; Temperature; Thermal conductivity; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567841

Filename

567841