Author :
De Jaeger, B. ; Houssa, M. ; Satta, A. ; Kubicek, S. ; Verheyen, P. ; Van Steenbergen, J. ; Croon, J. ; Kaczer, B. ; Van Elshocht, S. ; Delabie, A. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Lindsay, R. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Cona
Abstract :
We report for the first time on deep sub-micron Ge pFETs with physical gate lengths down to 0.151 μm. The devices are made using a silicon-like process flow, with a directly etched gate stack consisting of TaN gate on an ALD or MOCVD HfO2 dielectric. Promising drive currents are found. Various issues such as the severe short channel effects (SCE), the increased diode leakage compared to Si and the high amount of interface states (Nit) are addressed. The need for an alternative Ge substrate pre-treatment and subsequent high-k gate dielectric deposition to push EOT values below 1 nm is illustrated.
Keywords :
MOCVD coatings; MOSFET; atomic layer deposition; dielectric thin films; elemental semiconductors; germanium; hafnium compounds; interface states; leakage currents; tantalum compounds; 0.151 micron; ALD; EOT; Ge substrate pre-treatment; Ge-TaN-HfO2; MOCVD; MOSFET; diode leakage; directly etched gate stack; drive current; etched metal gate pFET; gate dielectric deposition; high-k gate dielectric; interface states; short channel effects; silicon-like process flow; Dielectric devices; Dielectric substrates; Diodes; Etching; Hafnium oxide; High-K gate dielectrics; Interface states; MOCVD; Prototypes; Silicon;
