DocumentCode :
1902632
Title :
High-Voltage ESFI-SOS Circuits for LCD-driver Applications
Author :
Pomper, M. ; Leîpold, L. ; Weidlich, R.
Author_Institution :
SIEMENS AG, Research Laboratories and Components Division, Munich, W.-Germany
fYear :
1977
fDate :
20-22 Sept. 1977
Firstpage :
176
Lastpage :
178
Abstract :
High-voltage MOS transistors fabricated in an ESFI-SOS technology have been investigated. Breakdown voltages exceeded 120 V. As application 100 V LCD-drivers employing dynamic bootstrap and static push-pull circuit techniques will be presented.
Keywords :
Breakdown voltage; Circuit testing; Delay; Doping; Driver circuits; Electric breakdown; Integrated circuit technology; Pulse measurements; Pulse modulation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
Conference_Location :
Ulm, F.R. Germany
Print_ISBN :
380071132X
Type :
conf
Filename :
5435082
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1902632
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