Title :
A 1 mV MOS Comparator
Author :
Yee, Y.S. ; Heller, L.G. ; Terman, L.M.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Abstract :
A MOS comparator circuit capable of detecting + 1 mV difference signals in 3 ¿s has been designed and tested. The circuit does not require high accuracy components or tight control of device parameter tolerences.
Keywords :
Circuit noise; Circuit testing; Coupling circuits; Latches; Signal design; Signal generators; Switched capacitor circuits; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
Conference_Location :
Ulm, F.R. Germany
