A high-gain monolithic D-band InP HEMT amplifier

Author

Pobanz, C. ; Matloubian, M. ; Lui, M. ; Sun, H.-C. ; Case, M. ; Ngo, C. ; Janke, P. ; Gaier, T. ; Samoska, L.

Author_Institution

Microelectron. Lab., HRL Labs., Malibu, CA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

41

Lastpage

44

Abstract

A three-stage monolithic amplifier has been developed which exhibits a measured small-signal gain of 30 dB at 140 GHz. The circuit employs 0.1-/spl mu/m AlInAs-GaInAs-InP HEMT devices with 150 /spl mu/m gate peripheries, and occupies a total area of 2 mm/sup 2/. Measured gain exceeds 10 dB from 129-157 GHz and 5 dB up to 184 GHz. This is the highest gain per stage ever reported in a transistor amplifier operating at these frequencies.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; millimetre wave amplifiers; 0.1 micron; 129 to 184 GHz; 5 to 30 dB; AlInAs-GaInAs-InP; AlInAs-GaInAs-InP HEMT devices; D-band; EHF; InP HEMT amplifier; MM-wave transistor amplifier; high-gain amplifier; three-stage monolithic amplifier; Frequency; Gain measurement; Gold; HEMTs; Indium phosphide; Laboratories; MMICs; Millimeter wave technology; Power transmission lines; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722618

Filename

722618