Ferroelectric-based functional pass-gate for low-power VLSI

Author

Kimura, H. ; Hanyu, T. ; Kameyama, M. ; Fujimori, Y. ; Nakamura, T. ; Takasu, H.

Author_Institution

Graduate Sch. of Inf. Sci., Tohoku Univ., Sendai, Japan

fYear

2002

fDate

13-15 June 2002

Firstpage

196

Lastpage

199

Abstract

A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottlenecks free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a. CMOS implementation under 0.6 /spl mu/m ferroelectric/CMOS.

Keywords

VLSI; content-addressable storage; ferroelectric capacitors; ferroelectric storage; integrated memory circuits; leakage currents; low-power electronics; binary CAM implementation; dynamic power dissipation; dynamic power reduction; ferroelectric capacitor; ferroelectric-based functional pass-gate; leakage currents; low-power VLSI; low-power logic-in-memory VLSI; static power reduction; write-back operation; CADCAM; CMOS memory circuits; Capacitors; Computer aided manufacturing; Ferroelectric materials; Leakage current; Logic arrays; Logic circuits; Power dissipation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7310-3

Type

conf

DOI

10.1109/VLSIC.2002.1015082

Filename

1015082